Gpixel
GLT5016BSI-ABM-NUN-BUE CMOS image sensor
MPN: GLT5016BSI-ABM-NUN-BUE
GLT5016BSI-ABM-NUN-BUE is a Gpixel CMOS image sensor in the GLT5016BSI family. 16k bsi tdi (time delay integration) line scan image sensor. Ordering configuration: VIS version.415 pins μPGA package.Sealed D263 ® Teco glass lid with AR coating on both sides,ES. Specifications below include family-level capabilities; confirm the selected configuration before ordering. Pricing, availability and lead time are available on request.
Specifications
| ADC | 12 bit |
|---|---|
| Availability | Engineering Samples (ES) |
| Channel Multiplexing | 108/96/72/48/36/24/12 |
| Chroma | Mono |
| Dark Current | 0.97 ke‾/pix/sec (15℃) |
| Dynamic Range | 60.5 dB (P1,10 bit,single band) 66.1 dB (P1,12 bit,single band) |
| Full Well Capacity | 16.3 ke⁻ (P1,10 bit,single band) 15.2 ke⁻ (P1,12 bit,single band) |
| Max Line Rate | 500 kHz |
| Max. Data Rate | 103.68 Gbps |
| Max. SNR | 41.7 dB |
| Nr of Active Pixels | P1: 16416 pixels x 256 stages P2: 16416 pixels x 32 stages |
| Optical Format | 82.02 mm |
| Ordering variant | VIS version.415 pins μPGA package.Sealed D263 ® Teco glass lid with AR coating on both sides,ES |
| Output Format | 108 ch Sub-LVDS |
| Package | μPGA 415 pins (98.08 mm x 19.00 mm) |
| Peak QE | UV version: 70.7 % (266 nm), 87.8 % (420 nm) VIS version: 92.4 % (436 nm), 87.0 % (590 nm) |
| Photosensive Area | P1: 82.08 mm × 1.28 mm P2: 82.08 mm × 0.16 mm |
| Pixel Size | 5 μm x 5 μm |
| Power Consumption | ≤ 6.3 W (P1,10 bit,500 kHz line rate) ≤ 6.6 W (P1,12 bit,500 kHz line rate) |
| Resolution | 16.4K |
| Sensor family | GLT5016BSI |
| Shutter Type | Time Delay Integration |
| Supply Voltage | 3.3 V (analog) 1.65 V (ADC) 1.6 V (digital) |
| Temporal Noise | 7.5 e⁻ (P1,12 bit,single band) 15.3 e⁻ (P1,10 bit,single band) |
Before ordering
- Minimum and maximum supply voltage, including transients
- Continuous and peak load, cooling and ambient temperature
- Isolation, mechanical envelope and mounting requirements
